Press Kit

ATTENDANCE AT IEDM IS COMPLIMENTARY FOR THE PRESS.
If you plan to attend, please let us know.

Whether you would like to do a news story, conference preview or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

Editor Contact:

Chris Burke, co-Media Relations Director, at chris.burke@btbmarketing.com

Registration/attendance questions:
Can be answered by Gail Sparks-Riegel, at gail@cemllc.com.

ABOUT IEDM
IEEE International Electron Devices Meeting (IEDM) is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electron-device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound, and organic semiconductors, but also emerging material systems.

The IEEE Electron Devices Society is dedicated to promoting excellence in the field of electron devices, and sponsors the IEDM. Learn more at https://eds.ieee.org/.

2025 IEEE IEDM Press Kit

Welcome to the Editor Press Center. The following press materials may be downloaded from this site for news coverage of the 2025 IEEE IEDM.

2025 IEEE IEDM Photos with captions:

Selected images from the papers will be presented in two formats:
– Word file with images associated with a highlighted paper and the caption
– JPEG file with individual high-resolution Images

Press Kit

ATTENDANCE AT IEDM IS COMPLIMENTARY FOR THE PRESS.If you plan to attend, please let us know.

2025 IEEE IEDM Press Kit

IEDM 2025 Call for Papers Release

IEDM 2025 Lead Release

IEDM 2025 Tipsheet of Technical Highlights

2025 IEEE IEDM Photos with captions:

Paper 2.2 Hybrid Channel Monolithic-CFET with Si (110) pMOS & (100) nMOS

Paper 2.5 First Demonstration of CFET Ring Oscillator and SRAM Bit-Cell Functionality at Gate Pitch Smaller Than 48 nm for Future Logic and SRAM Technology

Paper 5.7 High-Throughput Monolithic 3D Multi-bit Vertical 2TnF Ferroelectric Gain Cells for Computing-in-Memory to Accelerate Attention Mechanism in Transformer

Paper 8.1 10μm Pitch Ge-on-Si SPAD Pixel Array with PDE of 33.8% at 1300nm and 23.3% at 1550nm under Room Temperature Environment

Paper 9.1 First Demonstration of an Ultra-Wide Bandgap Power Module through Device-Package, Electro-Thermo-Mechanical Co-Optimization

Paper 10.1 Selective Etch Process for Fab-Compatible Top Contacts, Replacement Oxide and Interlayer Removal in 2D FETs

Paper 11.2 An 8Mb Learning-Aware RRAM Compute-in-Memory Accelerator for Embodied Self-Supervised Learning

Paper 13.1 A Multi-Shear-Mode Silicon Bulk Acoustic Clock Achieving 102ns Time Deviation at 8 Hours

Paper 17.4 Transistor-to-Package Thermal Simulation with Hotspot Mitigation by Decoupling

Paper 28.3 Monolithic 3D Integration of Dual-Gated ALD Oxide-Channel Non-Volatile Capacitive Memory on 40nm Si CMOS for Digital Compute-in-Memory

Paper 29.1 Highly Stackable Oxide-Semiconductor Channel Transistor Technology for Future High-Density and Low-Power 3D DRAM

Paper 32.2 A BEOL FeFET-Based Multi-bit ACiM Macro with High Accuracy and Throughput via Device-Array-System Co-Optimization for Edge LM

Paper 34.1 Monolithically Integrated Photodiode–Spiking Circuit for Neuromorphic Vision with In-Sensor Feature Extraction

Paper 36.2 GaN Chiplet Technology Based on 300mm GaN-on-Silicon

Paper 40.3 First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors

Paper 42.8 A 2-layer, 0.7μm-pitch Dual Photodiode Pixel CMOS Image Sensor with Metaphotonic Color Router

ATTENDANCE AT IEDM IS COMPLIMENTARY FOR THE PRESS.
If you plan to attend, please let us know.